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| SUD50N06-09L New Product Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.0093 @ VGS = 10 V 0.0122 @ VGS = 4.5 V ID (A)a 50 50 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive - ABS - Motor Drives - Fuel Injection D TO-252 G Drain Connected to Tab G D S S Order Number: SUD50N06-09L N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b _ Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAR EAR PD TJ, Tstg Limit "20 50 50a 100 50a 50 125 100 3b, 8.3b, c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t p 10 sec. Maximum Junction-to-Ambient Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 Board, t v 10 sec. c. t p 10 sec. Document Number: 72004 S-21714--Rev. A, 07-Oct-02 www.vishay.com Steady State RthJA RthJC Symbol Typical 15 40 1.2 Limit 18 50 1.5 Unit _C/W C/W 1 SUD50N06-09L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 48 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 15 A Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 50 0.0074 0.0093 0.016 0.020 0.0122 S W 60 V 1.0 2.0 3.0 "100 1 50 250 A m mA nA Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.6 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2650 470 225 47 10 12 10 15 35 20 20 25 50 30 ns 70 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C) Pulsed Current Diode Forward Voltage Reverse Recovery Time ISM VSD trr IF = 20 A, VGS = 0 V IF = 20 A, di/dt = 100 A/ms 1.0 45 100 1.5 100 A V ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72004 S-21714--Rev. A, 07-Oct-02 SUD50N06-09L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 5 V 80 I D - Drain Current (A) I D - Drain Current (A) 4V 60 80 100 Vishay Siliconix Transfer Characteristics 60 40 40 TC = 125_C 20 25_C -55 _C 0 20 2 V, 3 V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = -55_C 100 r DS(on) - On-Resistance ( ) g fs - Transconductance (S) 25_C 80 125_C 60 0.012 0.015 On-Resistance vs. Drain Current VGS = 4.5 V 0.009 VGS = 10 V 0.006 40 20 0.003 0 0 10 20 30 40 50 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 4000 3500 V GS - Gate-to-Source Voltage (V) 8 3000 2500 2000 1500 1000 Coss 500 0 0 Crss 10 20 30 40 50 60 Ciss 10 Gate Charge VDS = 30 V ID = 50 A C - Capacitance (pF) 6 4 2 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72004 S-21714--Rev. A, 07-Oct-02 www.vishay.com 3 SUD50N06-09L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 20 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C 100 Source-Drain Diode Forward Voltage 1.5 TJ = 25_C 10 1.0 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 60 1000 Limited by rDS(on) 50 100 I D - Drain Current (A) 40 I D - Drain Current (A) 10 ms 100 ms 10 1 ms 10 ms 100 ms dc Safe Operating Area 30 1 20 10 0.1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA - Ambient Temperature (_C) 2 1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 Normalized Effective Transient Thermal Impedance 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72004 S-21714--Rev. A, 07-Oct-02 |
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